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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3234
DESCRIPTION
*With TO-3 package *Excellent safe operating area *Low collector saturation voltage
APPLICATIONS
*For audio amplifier and power switching applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 160 7 7.5 115 150 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2N3234
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
160
V
VCE(sat)
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
1.0
V
VBE(on)
Base-emitter on voltage
IC=3A ; VCE=4V
1.5
V
ICEO
Collector cut-off current
VCE=80V; IB=0
0.7
mA
ICBO
Collector cut-off current
VCB=160V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=10V
18
55
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N3234
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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